Vertical NAND (V-NAND) or 3D NAND memory stacks memory cells vertically and uses a charge trap flash architecture. The vertical layers allow larger areal bit densities without requiring smaller individual cells. It is also sold under the trademark BiCS Flash, which is a trademark of Kioxia Corporation (formerly Toshiba Memory Corporation). 3D NAND was first announced by Toshiba in 2007. V-NAND was first commercially manufactured by Samsung Electronics in 2013.

Vertical NAND (V-NAND) or 3D NAND memory stacks memory cells vertically and uses a charge trap flash architecture. The vertical layers allow larger areal bit densities without requiring smaller individual cells. It is also sold under the trademark BiCS Flash, which is a trademark of Kioxia Corporation (formerly Toshiba Memory Corporation). 3D NAND was first announced by Toshiba in 2007. V-NAND was first commercially manufactured by Samsung Electronics in 2013.

Vertical NAND (V-NAND) or 3D NAND memory stacks memory cells vertically and uses a charge trap flash architecture. The vertical layers allow larger areal bit densities without requiring smaller individual cells.[88] It is also sold under the trademark BiCS Flash, which is a trademark of Kioxia Corporation (formerly Toshiba Memory Corporation). 3D NAND was first announced by Toshiba in 2007.[49] V-NAND was first commercially manufactured by Samsung Electronics in 2013.